Introduction. A semiconductor diode based on reverse current interruption is used to increase a pulse amplitude and peak power delivered on the process load. Usually, a current interrupter is located in the last stage of semiconductor-magnetic pulse generator (SMPG) and is connected in parallel to the load. Problem. Most of publications on this topic mostly concern with analysis of physical processes in the diode structure itself within its oscillating circuit, which is separated from previous SMPG’s pulse compression stages under condition of unidirectional energy transfer from the generator to the load. In this sense, the efficiency of conversion should be determined by the joint of electromagnetic interaction between non-linear compression stages, current interrupter and process load. Goal. Develop a mathematical model of nanosecond current interrupter to determine its electrical and energy characteristics as part of a high-voltage parallel circuit with magnetic pulse compression, depending on the duration and moment of current interruption, the equivalent circuit for load resistance, and to set the most optimal modes of its operation. Methodology. In this work, it is proposed t
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