Electrical properties of TiO₂ thin films prepared by the sol‐gel method

AbstractA TiO2 thin film was prepared by the sol‐gel method using a metal alkoxide [Ti(O‐i‐Pr)4 tetrasopropoxy titanium: TIPT]. The crystalline form of the film depends on the preparation conditions and the heat treatment temperature. When the ratio (γ) of H2O to TIPT is 7, the crystalline phase is formed at 400°C; when γ = 2 it is formed at 500°C. The anatase crystal structure was obtained for both γ = 2 and γ = 7. The electrical conductivity of the TiO2 film increased with the heat treatment temperature.