Proposal of a Hamming distance detector using neuron MOS transistors

AbstractA neuron MOS transistor has been proposed which operates more “intelligently” than a conventional MOS transistor. In this paper, we propose a Hamming distance detector with a large noise margin using the neuron MOS transistors. The proposed circuit accepts two bitstreams to be compared in parallel, and makes it possible to determine if the two bitstreams are identical (“exact match”) or if the Hamming distance between the two bitstreams is within a certain range (“near match”). Moreover, the “acceptable” range of the Hamming distance (in the case of “near match”) can be soft‐programmed. The operating characteristics of the circuit are also analyzed in detail. Furthermore, these analyses are fully confirmed by simulation using the circuit analysis program HSPICE. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 155(1): 44–51, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20223