Chemistry of Organometallic Compounds on Silicon: The First Step in Film Growth

AbstractThe continuous decrease in size of electronic devices has reached a critical point at which the molecular‐level understanding of chemical processes is imperative. Metal‐containing films, an important part of every circuit, are currently deposited from a myriad of organometallic compounds, in order to control the first stages of film growth and ultimately produce an atomically defined interface. This article outlines recent molecular‐level investigations on reactions of organometallic compounds with silicon surfaces. The role of surface structure and chemical state is placed in a framework of future challenges and opportunities for applications in electronics.